Physics of Semiconductor Devices - Revision history

Aplstudent: /* Future Direction */

2015-12-11T17:19:44Z

Future Direction

← Older revision		Revision as of 17:19, 11 December 2015
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	Next term we will reassemble the cryostat, make the necessary electrical connections, and take band gap measurements. I have high expectations for these measurements and expect we finally have a sound experimental set up. Once we have completed the band gap measurements we will then research excitons and attempt to observe them by conducting extremely precise photovoltage measurements.		Next term we will reassemble the cryostat, make the necessary electrical connections, and take band gap measurements. I have high expectations for these measurements and expect we finally have a sound experimental set up. Once we have completed the band gap measurements we will then research excitons and attempt to observe them by conducting extremely precise photovoltage measurements.

	~~== Future Direction ==~~

	~~We will be refining the band edge measurement in coming weeks and months. There are numerous improvements we can make to the experimental design, which should improve fidelity.~~

	First, we will polish our fiber optic connections. We lose quite a lot of laser power in the fifty-fifty splitter and ninety-five-five splitter. We will also be applying a lens which should focus the laser beam on the active region of the P-N junction of the diode. Increasing power delivered to the diode should make the band edge more apparent amidst the noisy background.

	~~Secondly, we wish to reduce noise itself through the inclusion of lock-in amplification.~~

	~~These additions should allow us to produce a far better measurement of the band-edge energy.~~

	~~With a good measurement achieved, we wish to study the excitonic conduction which occurs just below band-edge energy.~~

Aplstudent: /* Band Edge Measurement */

2015-12-11T17:19:24Z

Band Edge Measurement

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	== Band Edge Measurement ==		== Band Edge Measurement ==

	We then began work on the principle focus of our research- the band edge measurement. A distinct type of semiconductor device is the laser diode. By applying a laser of sufficient wavelength to the p-n junction of the laser diode, we are able to produce a non-trivial voltage. This is, in essence, the photovoltaic effect. We sought to measure the wavelength (and therefore energy) necessary to stimulate this effect.		We then began work on the principle focus of our research- the band edge measurement. A distinct type of semiconductor device is the laser diode. By applying a laser of sufficient wavelength to the p-n junction of the laser diode, we are able to produce a non-trivial voltage. This is, in essence, the photovoltaic effect. We sought to measure the wavelength (and therefore energy) necessary to stimulate this effect. The following diagram shows our initial experimental setup.

	~~The following is a diagram of the experimental setup~~:		[[File:BGSetup1.JPG\|center\|]]

	~~[[File~~:~~setup3~~.~~png\|center\|]]~~		We were conducting these experiments on a ML925B45F Laser Diode which should have a band gap of about 1550nm. In theory, the laser diode will produce a photocurrent and thus a photovoltage only if the light shined on the diode is of a wavelength that is less then 1550nm (higher energy light then 1550nm). Thus, our data taking procedure was relatively straight-forward: we measured the photovoltage output on an oscilloscope for a range of wavelengths that scanned through 1550nm. As we scanned though wavelengths we would make sure to maintain a constant power by adjusting the current used in our laser source. We predicted these measurements would yield no photovoltage at wavelengths greater then 1500nm and some photovoltage at wavelengths less then 1550nm.

	~~The external cavity diode laser is fed into a fifty-fifty splitter. Half of~~ the ~~laser's power is fed into the wavemeter~~ and the ~~other half is fed into ninety-five-five splitter~~. ~~The five percent end is then fed into~~ a ~~power meter~~, ~~while the remaining portion is fed into~~ a laser. ~~This laser~~ is ~~coupled in free space to~~ our ~~laser~~ diode. ~~The laser diode voltage~~ is ~~determined through~~ the ~~use of a digital voltmeter~~ and ~~temperature is controlled using~~ a ~~TEC unit~~.		We preformed the experiment several times using our initial experimental set (above) and did not receive the predicted results. Our measurements yielded a constant photovoltage independent of wavelength. Just to confirm that our laser diode was functioning correctly, we ran current through our diode to produce a laser. We wavelength of this light to be about 1552nm. So why were we not seeing any photovoltage changes as we scanned from 1570nm to 1715nm? Well the answer (thanks to Bryan) is that our diode is too hot. Bellow is a diagram that demonstrates the problem and a way to fix it.

	One subtlety we did not appreciate in early iterations of this experiment was that as we decreased the wavelength from the tuneable laser, laser power decreased. This caused poor results and the power meter allowed us to stabilize power output.		[[File:ThermalProblemNew12.jpg\|center\|]]

	The ~~following~~ is ~~a graph~~ of our ~~preliminary results~~. ~~Notice~~ the ~~high amount of noise, relative~~ to the ~~received signal~~. ~~Also notice~~ that ~~the noise floated between each measurement~~.		These are some rough (but accurate enough) calculations of laser energy and thermal energy. Laser energy and thermal energy were determined with E=hc/λ and E≈kBT respectively. The lowest energy of light we could produce has energy 0.787 eV (1574nm) and the energy from room temperature (293k) is 0.0252 eV. The sum of these two energies is higher then the band gap! At any wavelength that we can produce with our laser, there should always be photovoltage, which is what we observed. The solution is to cool down our experiment so that we have the ability to scan through the band gap energy using our tune-able laser. Below is our new set up that is currently under construction.

	[[File:~~signalandnoise~~.~~png~~\|center\|]]		[[File:BGSetup2.JPG\|center\|]]

	The ~~following~~ is a ~~graph~~ of the ~~signal~~ with the ~~noise subtracted~~. The ~~measurement is okay~~. The ~~band gap energy is seemingly delivered at a wavelength somewhere between 1554~~ and ~~1550nm~~.		We will be using a Cryostat to cool the laser diode to a sufficiently low temperature so the band gap measurement can be made. The avaliable cryostat in the lab needed two alterations so that it is compatible with our experiment. First, we needed a "cold finger" for the laser diode. A "cold finger" is a highly heat conductive piece of metal that allows good thermal connection between the cryostat and the diode. Below (first photo) is a photo of our laser diode mounted in the crystat with our newly machined cold finger. We machined this at the university's machine shop out of scrap piece of copper. The critical part of the cryostat's operation involves the need for a vacuum inside the machine. We needed a way to run a fiber optic into the cryostat without compromising the vacuum. Again, we visited the machine shop and consulted with the experts there to construct such a device. The second and third photo below show this device.

	[[File:~~Signal~~.~~PNG~~\|center\|]]		[[File:Coldfinger.JPG\|500px\|center\|]]
			[[File:Fiberseal1.JPG\|500px\|center\|]]
			[[File:Fiberseal2.JPG\|500px\|center\|]]

			Next term we will reassemble the cryostat, make the necessary electrical connections, and take band gap measurements. I have high expectations for these measurements and expect we finally have a sound experimental set up. Once we have completed the band gap measurements we will then research excitons and attempt to observe them by conducting extremely precise photovoltage measurements.

	== Future Direction ==		== Future Direction ==

Wikiuser at 16:19, 5 December 2015

2015-12-05T16:19:34Z

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 Interestingly we see this double peak while scanning the laser across the PN junction, namely the active region of the intrinsically doped region of the laser diode. We understand that in a PIN diode configuration, also described as a heterojunction - we see that the intrinsic region has the lowest bandgap energy which corresponds to the refractive index. In this way the active region of the laser diode acts as a waveguide, and this is the face of the laser that emits radiation. We consider our double peak somewhat as a result of the intensity of the laser. We know that as a non-linear optical phenomena, two photon absorption is very difficult to witness at low intensity but dominates at high intensity. We understand that perhaps when the beam is strictly on the active region, we are depleting the entire region of charge carriers and when we scan in nearby areas (such as overlapping a junction) there are more nearby available charge carriers to conduct. Thus this is the next phase of the experiment is to document the electric potential difference signal of the heterojunction by varying the intensity of the laser and documenting the behavior of this double peak. Our future measurements include continuing two-photon absorption, band edge measurements, exciton structure, etc...
+== IV and CV Curve Measurements Revisited==
 Like other groups, we began by exploring the 'activation voltage' of a 365-1085-ND photodiode- that is, the voltage required in order for the p-n junction to conduct.

Wikiuser: /* Depletion Region Measurements */

2015-12-05T16:13:05Z

Depletion Region Measurements

← Older revision		Revision as of 16:13, 5 December 2015
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	consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.		consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.

	=Depletion Region Measurements=		=Capacitance and Depletion Region Measurements=
	[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]		[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]
	For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.		For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.
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	== Two Photon ~~Upconversion - Derek Hallman~~ ==		== Two Photon Absorption ==

	This leg of the experiment was Introducing a laser to the laser diode detector of wavelength one half of the wavelength that would normally cause single photon absorption.		This leg of the experiment was Introducing a laser to the laser diode detector of wavelength one half of the wavelength that would normally cause single photon absorption.
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	- Different behavior across the PN junction from OPA		- Different behavior across the PN junction from OPA

	~~== Two Photon Absorption - Derek Hallman & Evan Graham ==~~

	We wished to improve upon measurements made and to make strides to better understand the nature of Laserdiodes and the physics of the semiconductors that comprise them. We saw in previous measurements how temperature could effect the behavior of charges in the laser diode. Our first goal was to introduce some temperature control to the design, so we replaced the diode that we have reverse biased for use as the detector. We introduced the LDM21 as a more advanced diode mount with integrated temperature control, we also replaced the diode in the mount from whichever we were using before (no exact specs, but we knew it had a bandgap ~785nm) with the thorlabs L785P6 diode which we then had the exact specifications for. We needed to correctly arrange the diode in the mount, and solder a D9 Connector so that we may monitor the signal out of the diode. We opted to use 2 BNC Coaxial cables as we used one of the tips of the cable as a ground, which grounded the diode, and the Cathode of the diode as we were operating in reverse bias / Cathode grounding, and the other BNC went to the anode so we could measure the signal. We monitored our signal using a LockIn-Amplifier and used Math Functions to monitor our signal as a potential difference (Anode - Ground / Cathode). Attempting to re-establish our signal we could not find evidence of two photon absorption using the 1550nm ~20mW laser we had used before while searching over the diode, and using OPA (~634nm ~2mw) to roughly align the pn junction with the microscope objective.		We wished to improve upon measurements made and to make strides to better understand the nature of Laserdiodes and the physics of the semiconductors that comprise them. We saw in previous measurements how temperature could effect the behavior of charges in the laser diode. Our first goal was to introduce some temperature control to the design, so we replaced the diode that we have reverse biased for use as the detector. We introduced the LDM21 as a more advanced diode mount with integrated temperature control, we also replaced the diode in the mount from whichever we were using before (no exact specs, but we knew it had a bandgap ~785nm) with the thorlabs L785P6 diode which we then had the exact specifications for. We needed to correctly arrange the diode in the mount, and solder a D9 Connector so that we may monitor the signal out of the diode. We opted to use 2 BNC Coaxial cables as we used one of the tips of the cable as a ground, which grounded the diode, and the Cathode of the diode as we were operating in reverse bias / Cathode grounding, and the other BNC went to the anode so we could measure the signal. We monitored our signal using a LockIn-Amplifier and used Math Functions to monitor our signal as a potential difference (Anode - Ground / Cathode). Attempting to re-establish our signal we could not find evidence of two photon absorption using the 1550nm ~20mW laser we had used before while searching over the diode, and using OPA (~634nm ~2mw) to roughly align the pn junction with the microscope objective.
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	Lastly, an intelligent and working implementation of the Cryostat designed by the previous group should be carried out so the temperature dependence of the recombination current can be accurately characterized.		Lastly, an intelligent and working implementation of the Cryostat designed by the previous group should be carried out so the temperature dependence of the recombination current can be accurately characterized.


	= Alex Cook and Nick Wogan Research Project =		= Alex Cook and Nick Wogan Research Project =

Wikiuser: /* Deep Level Transient Spectroscopy */

2015-12-05T16:05:06Z

Deep Level Transient Spectroscopy

← Older revision		Revision as of 16:05, 5 December 2015
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	== Deep Level Transient Spectroscopy ==		== Deep Level Transient Spectroscopy ==

	~~The~~ Deep Level Transient Spectroscopy was discussed in detail above ~~by [http://hank~~.~~uoregon.edu/wiki/index.php/Physics_of_Semiconductor_Devices#Group_1 Group 1]~~		Deep Level Transient Spectroscopy was discussed in detail above.


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	To cool the diode we used a cryostat. A cryostat is essentially a liquid nitrogen Dewar with a chamber enclosed that has a plate in thermal contact with the liquid nitrogen. A picture of the cryostat is shown in figure 16. Everything in the chamber is cooled significantly, and anything in thermal contact with the plate, is also in thermal contact with the liquid nitrogen. We mounted the diodes in the cryostat by soldering them to a circuit board, and then affixing the circuit board to the thermal plate in the cryostat with the diodes all in contact with it. A schematic of this circuit board can be seen in figure 17. The diodes were then wired into a port so they could be connected to the rest of the circuit. The PIN layout of the port is shown in Figure 18.		To cool the diode we used a cryostat. A cryostat is essentially a liquid nitrogen Dewar with a chamber enclosed that has a plate in thermal contact with the liquid nitrogen. A picture of the cryostat is shown in figure 16. Everything in the chamber is cooled significantly, and anything in thermal contact with the plate, is also in thermal contact with the liquid nitrogen. We mounted the diodes in the cryostat by soldering them to a circuit board, and then affixing the circuit board to the thermal plate in the cryostat with the diodes all in contact with it. A schematic of this circuit board can be seen in figure 17. The diodes were then wired into a port so they could be connected to the rest of the circuit. The PIN layout of the port is shown in Figure 18.

	~~[[File:cyro diode layout.jpg\|500px\|thumb\|left\|Figure 17]]~~
	~~[[File:cyrostate Pin config.jpg\|500px\|thumb\|right\|Figure 18]]~~

	The cryostat was never actually tested due to issues with the DLTS setup. And a new port should be made to connect the diodes in the cryostat to the external circuit, since the current port has brass pins on the outside, which solder does not stick to very well. That said, the current port will work fine if a hook or clip is attached to the each individual pin. The easiest method would be to use a BNC port.		The cryostat was never actually tested due to issues with the DLTS setup. And a new port should be made to connect the diodes in the cryostat to the external circuit, since the current port has brass pins on the outside, which solder does not stick to very well. That said, the current port will work fine if a hook or clip is attached to the each individual pin. The easiest method would be to use a BNC port.
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			== Diode Capacitance Revisited ==













	==



	We performed many of the above experiments as well, beginning with measuring the IV Curve of a diode, We used a PK6E30A diode, and used a current limiting circuit in order to limit the current through the diode. We varied the voltage in to measure the resulting current out and plotted the two. We performed this measurement for forward and reverse bias to begin understanding the pn junction and depletion region. We understand the mechanisms of charge carriers and how a diode works in forward and reverse bias.		We performed many of the above experiments as well, beginning with measuring the IV Curve of a diode, We used a PK6E30A diode, and used a current limiting circuit in order to limit the current through the diode. We varied the voltage in to measure the resulting current out and plotted the two. We performed this measurement for forward and reverse bias to begin understanding the pn junction and depletion region. We understand the mechanisms of charge carriers and how a diode works in forward and reverse bias.
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	Now we measured the capacitance of the diode as we understand that the depletion region will act effectively as a capacitator. Charges will migrate across the region until the resulting electric field will prevent further current. The smaller the depletion region, we found the higher the effective capacitance of the diode		Now we measured the capacitance of the diode as we understand that the depletion region will act effectively as a capacitator. Charges will migrate across the region until the resulting electric field will prevent further current. The smaller the depletion region, we found the higher the effective capacitance of the diode


	~~Here our projects split where Alex pursued the DLTS experiments while John and Derek continued using laser diodes.~~

	== Measuring Depletion Region with a Laser ==		== Measuring Depletion Region with a Laser ==

Wikiuser at 16:00, 5 December 2015

2015-12-05T16:00:36Z

← Older revision		Revision as of 16:00, 5 December 2015
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	Here is the Power Point Presentation of our final presentation. It includes a few pictures of our setup and the diodes and may prove useful if there are any questions in the actual physical setup of the experiment. [[File:Final Presentation.pdf]]		Here is the Power Point Presentation of our final presentation. It includes a few pictures of our setup and the diodes and may prove useful if there are any questions in the actual physical setup of the experiment. [[File:Final Presentation.pdf]]

	= ~~Group 3: Derek Hallman, John McGonigle, Alex Schachtner~~ =

















			==

Wikiuser: /* Band Edge */

2015-12-05T15:53:06Z

Band Edge

← Older revision		Revision as of 15:53, 5 December 2015
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	[[File:-1Vdepltion.png\|700px\|thumb\|center\|Figure 7]]		[[File:-1Vdepltion.png\|700px\|thumb\|center\|Figure 7]]

	=== Band Edge ===		=== Band Edge Measurements===

	From quantum mechanics we know that atoms exist in discrete energy levels. When N atoms are brought together, such as in a crystal, the atomic energy levels interact. This interaction causes the energy levels to split into N distinct levels. However, in crystal that contains a large number of atoms, there are so many levels, that they are indistinguishable from one another, and what is known as an energy band is created. In this band, electrons can move freely since the neighboring bands are almost touching.		From quantum mechanics we know that atoms exist in discrete energy levels. When N atoms are brought together, such as in a crystal, the atomic energy levels interact. This interaction causes the energy levels to split into N distinct levels. However, in crystal that contains a large number of atoms, there are so many levels, that they are indistinguishable from one another, and what is known as an energy band is created. In this band, electrons can move freely since the neighboring bands are almost touching.
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	[[File:Band Edge Measurements.png\|500px\|thumb\|center\|Figure 8]]		[[File:Band Edge Measurements.png\|500px\|thumb\|center\|Figure 8]]
	[[File:laser spectrum.png\|500px\|thumb\|center\|Figure 9]]		[[File:laser spectrum.png\|500px\|thumb\|center\|Figure 9]]


	== Deep Level Transient Spectroscopy ==		== Deep Level Transient Spectroscopy ==

Wikiuser: /* Group 2: Depletion Region Measurements */

2015-12-05T15:52:23Z

Group 2: Depletion Region Measurements

← Older revision		Revision as of 15:52, 5 December 2015
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	consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.		consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.

	=~~Group 2:~~ Depletion Region Measurements=		=Depletion Region Measurements=
	[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]		[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]
	For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.		For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.

Wikiuser: /* Group 1 */

2015-12-05T15:51:55Z

Group 1

← Older revision		Revision as of 15:51, 5 December 2015
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	The goal of this project is to characterize different semiconductors using various techniques.		The goal of this project is to characterize different semiconductors using various techniques.

	= ~~Group 1~~ =		=Deep-Level Transient Spectroscopy=
	One goal of the Physics of Semiconductor Devices project is to measure captured carriers within the band-gap of a semiconductor. If a carrier (a hole or electron) is captured and then released in the band, the capture center is called a trap. These traps arise from defects or impurities in the material. One technique for measuring these traps is through Deep Level Transient Spectroscopy, or DLTS. This technique essentially measures the change in capacitance of the semiconductor.		One goal of the Physics of Semiconductor Devices project is to measure captured carriers within the band-gap of a semiconductor. If a carrier (a hole or electron) is captured and then released in the band, the capture center is called a trap. These traps arise from defects or impurities in the material. One technique for measuring these traps is through Deep Level Transient Spectroscopy, or DLTS. This technique essentially measures the change in capacitance of the semiconductor.

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	consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.		consider emission rates which are what define the capacitance transient. We can define emission rate "windows", a certain rate in the capacitance transient, to measure only emission rates that we define. For each window we can take measurements at many different temperatures and we will see peaks at temperatures (because emission rate is temperature dependent) that match the window we defined. If we change the window and repeat the measurement we will see peaks at different temperatures. If we plot the width of the peaks against 1/Temperature we will observe a straight line, the length of which will be the rate window we defined. By measuring several different windows at varying temperatures we will observe a long straight line. The slope of that line is the activation energy for the trap. We will use a cryostat with liquid nitrogen to measure the diode at different temperatures.


	=Group 2: Depletion Region Measurements=		=Group 2: Depletion Region Measurements=

Wikiuser: /* Group 2: Zach Small and Chris Luetjen */

2015-12-05T15:50:43Z

Group 2: Zach Small and Chris Luetjen

← Older revision		Revision as of 15:50, 5 December 2015
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	=Group 2: ~~Zach Small and Chris Luetjen~~=		=Group 2: Depletion Region Measurements=
	[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]		[[File:ivcurve.png\|400px\|thumb\|right\|Figure 1]]
	For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.		For a standard diode its characteristics depends on what material the diode is made out of and with what it has been doped with. For the 1N4004, we measured an I-V characteristic as shown in Figure 1.
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	Here is the Power Point Presentation of our final presentation. It includes a few pictures of our setup and the diodes and may prove useful if there are any questions in the actual physical setup of the experiment. [[File:Final Presentation.pdf]]		Here is the Power Point Presentation of our final presentation. It includes a few pictures of our setup and the diodes and may prove useful if there are any questions in the actual physical setup of the experiment. [[File:Final Presentation.pdf]]












	= Group 3: Derek Hallman, John McGonigle, Alex Schachtner =		= Group 3: Derek Hallman, John McGonigle, Alex Schachtner =